Steel Mesh Polyethylene Composite Pipe
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**Abstract**
Controllable synthesis of high-quality graphene is essential for both fundamental research and practical applications, making it a critical scientific challenge that requires in-depth investigation. This field involves precise control over various parameters such as size, shape, boundary conditions, crystal structure, and doping, all of which are crucial for achieving optimal electrical performance.
Supported by the Chinese Academy of Sciences, the Ministry of Science and Technology, and the National Natural Science Foundation of China, researchers from the Institute of Organic Solids at the Chinese Academy of Sciences have made significant progress in controlling graphene synthesis. Their work has led to breakthroughs in performance studies, with results published in prestigious journals like *Advanced Materials*, *NPG Asia Mater.*, *J. Am. Chem. Soc.*, and *Nat. Commun.*
One of the key advancements is the direct growth of graphene on dielectric layers. While chemical vapor deposition (CVD) is widely used for producing high-quality, large-area graphene, transferring the material to another substrate often introduces defects, wrinkles, and contamination. Growing graphene directly on dielectric materials not only avoids these issues but also aligns with existing silicon-based electronics processes, enabling efficient device fabrication.
In their preliminary work, the team developed an oxygen-assisted method to grow graphene directly on silica, achieving high-quality films with excellent electrical properties. They further refined this process using a two-step CVD approach, enabling precise control over nucleation and crystal size. The resulting graphene films exhibited mobility values of up to 1510 cm²/V·s in air and 1518 cm²/V·s in nitrogen—double that of conventional methods. These findings were published in *Advanced Materials* and featured on its cover.
Another major achievement was the regulation of single-crystal graphene morphology. By manipulating the kinetics of graphene growth through gas ratios, the researchers created unique snowflake-like structures with six-fold symmetry. These patterns resemble natural snowflakes and represent the first known two-dimensional system to mimic such complex structures. This discovery provided new insights into the growth mechanisms of two-dimensional crystals and was published in *NPG Asia Mater.*
Building on this, the team explored graphene etching behavior. Traditional models suggested that etching follows anisotropic patterns based on crystal symmetry. However, by adjusting the Hâ‚‚/Ar gas ratio, they observed a transition from simple Euclidean to complex fractal etching patterns. This finding challenged previous assumptions and was highlighted in *J. Am. Chem. Soc.* and *Chemistry World*.
Additionally, the researchers collaborated with international teams to develop intramolecular junctions between single-walled carbon nanotubes and graphene. These junctions demonstrated high rectification ratios and superior photodetector performance, with potential applications in optoelectronics. The work was published in *Nat. Commun.*
Overall, these studies reveal the complexity of non-equilibrium graphene growth and open new pathways for scalable, high-quality, and clean synthesis. They also provide broader insights into material growth in dynamic systems, bridging concepts of order, randomness, and complexity in science.